Indium Antimonide IR Photodiodes

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indium antimonide (InSb) is a narrow-gap semiconductor with high electron mobility. It is a popular material in IR detectors, including thermal imaging cameras and FLIR systems. It is also used in terahertz radiation sources, and in fast transistors.

InSb photodiode wafers can be offered in high quality epi-ready or mechanical grade with wide range of doping concentration and thickness. They could be supplied in n type, p type or semi-insulating orientation(111) or (100).

J10D Series InSb Photodiodes offer excellent performance in the 1-5 um wavelength region using single crystal p-n junction technology. They have low noise and low shunt resistance, and are highly linear and stable. They are also available with a wide array of pins and sizes for easy integration into your application.

Typical Refractive Index and Extinction Coefficients for InSb at 632.8 nm are 4.25505 and 1.801727, respectively. InSb has a small band gap that requires accurate treatment of conduction and valence band interactions, which can be accomplished by perturbation theory.

Useful applications of InSb include a variety of infrared detectors, including thermal imaging cameras, FLIR systems and infrared homing missile guidance systems. It is also a strong terahertz emitter.

A symmetric and an asymmetric InSb nanowire have been studied to detect infrared signals at room temperature. They have a diameter of 10 nm and are tens of microns long.

InSb is commonly used in thermal imaging systems because it is sensitive between 1 and 5 mm in wavelength, making it an excellent candidate for an IR sensor. It is also used in a number of other applications, including infrared astronomy.