Chromium Silicide

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chromium silicide is an inorganic compound containing chromium and silicon. It is a p-type thermoelectric semiconductor with an excellent field-emission behavior. It has been fabricated inside silicon nanopillars grown by the vapor-liquid-solid mechanism. The remarkable field-emission performance results from extensive improvement of carrier transport due to the reduction in energy barrier between the metal and semiconductor layers.

A silicide is a chemical compound that combines silicon with another more electropositive element such as a transition metal or non-transition metal (except beryllium). Like borides and carbides, the chemical bonds in silicides can either be covalent or ionic. Transition metal silicides are generally miscible with liquid silicon, while non-transition metal silicides (such as thallium, bismuth and mercury) are not.

The redistribution of oxygen in ion irradiated CoSi2 was studied using 2 MeV 4He+ backscattering spectroscopy and 18O depth profiling. The results demonstrate that the oxide layer at the Co/Si2 interface is responsible for a significant portion of the oxygen reactivity and that the reaction is temperature dependent.

Thin films of metallic silicides such as CoSi2, NiSi2, MoSi2, TiSi2, and WSi2 play critical roles in modern microelectronics devices. They provide efficient electrical conductivities, improved Seebeck coefficients, and Schottky barriers for infrared detection and high-temperature power applications. In addition, alkali metal silicides produce pure hydrogen by reacting with water, and this makes them a potential energy source for fuel cells.